GaN Systems GS-065-060-3 650V Enhancement Mode GaN Transistor

GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while transferring substantially more current using on-chip metal. GaNPX® packaging enables low inductance and low thermal resistance in a small package. These features combine to provide very high-efficiency power switching.

The GaN Systems GS-065-060-3 650V Enhancement Mode GaN Transistor is offered in two variants. The GS-065-060-3-B is a bottom-side cooled transistor, while the GS-065-060-3-T is a top-side cooled transistor. Both devices provide very low junction-to-case thermal resistance for demanding high-power applications.


  • Enhancement mode power transistor
  • 650V drain-to-source voltage (VDS)
  • 25mΩ drain-to-source on-resistance (RDS(on))
  • 60A continuous drain current (IDS)
  • Simple gate drive Requirements (0V to 6V)
  • -20V/+10V gate-to-source voltage-transient (VGS(transient))
  • >10MHz switching frequency
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Dual gate pads for optimal board layout
  • -55°C to +150°C operating junction temperature (Tj)
  • 0.27°C /W junction-to-case thermal resistance (RΘJC)
  • Package
    • GS-065-060-3-B: Bottom-cooled, low inductance GaNPX package
    • GS-065-060-3-T: Top-cooled, low inductance GaNPX package
  • Dimensions
    • GS-065-060-3-B: 11.0mm x 9.0mm x 0.45mm
    • GS-065-060-3-T: 9.2mm x 7.8mm x 0.49mm
  • RoHS 3 (6+4) compliant

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